Emission and excitation spectra of ZnO:Ga and ZnO:Ga,N ceramics |
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Authors: | P A Rodnyĭ I V Khodyuk E I Gorokhova S B Mikhrin P Dorenbos |
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Institution: | (1) St. Petersburg State Technical University, St. Petersburg, 195251, Russia;(2) All-Russia Research Center Vavilov State Optical Institute, St. Petersburg, 192171, Russia;(3) Faculty of Applied Sciences, Delft University of Technology, 2629 JB Delft, The Netherlands |
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Abstract: | The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, E m (0) = 3.367 ± 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered. |
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