Effects of thin MnAl buffer layer on structural and magnetic properties of MnAl films |
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Authors: | Zhang Xu-Hui Ma Bin Zhang Zong-Zhi Jin Qing-Yuan |
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Affiliation: | Key Lab of Advanced Photonic Materials and Devices, Laboratory of Advanced Materials and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China |
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Abstract: | Thin Mn(2 nm)/Al(2 nm) bilayers serving as buffer layers have been prepared prior to the deposition of MnAl films. The ferromagnetic τ-phase forms in the buffer layers at an optimum substrate temperature. As a template it induces the growth of following MnAl film. Compared with the case of film without buffer layer, the growth of non-ferromagnetic phase is suppressed and the structural and magnetic properties of MnAl film are improved. Weak dipolar inter-grain coupling is revealed in the MnAl film, and the magnetic reversal process is dominated by magnetic moment rotation. |
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Keywords: | L10 τ--MnAl buffer layer |
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