Chirped Bloch oscillations in strain-balanced InGaAs/InGaAs superlattices |
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| Institution: | 1. Department of Physics, Indian Institute of Science, Bangalore 560 012, India;2. Solid State Physics Laboratory, Lucknow Road, Delhi 110 054, India;1. Lockheed Martin Corporation, Schenectady, NY 12301-1072, USA;2. Emcore Corporation, Albuquerque, NM 87123, USA;3. MIT Lincoln Laboratory, Lexington, MA 02420, USA;4. Sarnoff Corporation, Princeton NJ, 08543-5300,USA;5. Department of Electrical Engineering, State University of New York, Stony Brook, NY 11794-2350, USA;1. Laboratoire de Physique des Semiconducteurs et des Composants Electroniques, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5000 Monastir, Tunisia;2. Laboratoire Multimatériaux et Interfaces. Université Claude Bernard Lyon 1 43, Boulevard du 11 Novembre 1918, France;1. Laboratorio de Nanoestructuras Semiconductoras, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia, Manizales, Colombia;2. Escuela de Materiales, Facultad de Minas, Universidad Nacional de Colombia - sede Medellín, Colombia;3. CINVESTAV-IPN, Departamento de Ingeniería Eléctrica, Avenida IPN No. 2508, 07360 México, D. F., México;4. CINVESTAV-IPN, Departamento de Física, Avenida IPN No. 2508, 07360 México, D. F., México |
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| Abstract: | Bloch oscillations excited in a strain-balanced InxGa1 − xAs/InyGa1 − yAs superlattice by fs optical pulses at 1.55 μ m are investigated in time-resolved transmission spectroscopy. The transition from the coherent oscillatory motion to an incoherent drift transport of the electrons is observed via a transient frequency shift of the Bloch oscillations due to the associated screening of the applied electric field. These electric field changes are analyzed quantitatively as a function of the initial field strengths and excitation densities. The incoherent transport can be described by a drift-diffusion model. As a result, the carrier mobility in the superlattice is obtained on a picosecond timescale. |
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