Suppression of the tunneling effect by shallow junctions in field-effect transistor

We study the quantum wave transport in nanoscale field-effect transistors. It has been shown that the tunneling effect between the source and the drain in an ultra-short channel transistor significantly degrades the control of the drain current by the gate. However, the tunneling effect is suppressed by reducing the depth of the source and drain junctions which is designated to suppress the short-channel effects concerning the cut-off characteristics of the field-effect transistor. The reduced junction depth confines the carriers in the direction (y -direction) perpendicular to the transport direction (x -direction). The matching of y -direction wavefunctions at regional boundaries suppresses the tunneling effect and normal FET current–voltage characteristics has been obtained, which explains theoretically the successful fabrication of nanoscale field-effect transistors.