Structural control of Fano resonances in semiconductor heterostructures |
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| Institution: | 1. Department of Applied Microbiology, Faculty of Applied Sciences, Taiz University, Taiz Yemen;2. Faculty of Applied Sciences and Technology, Universiti Tun Hussein Onn Malaysia (UTHM), KM11 Jalan Panchor, 84000 Pagoh, Muar, Johor, Malaysia;3. Micro-pollutant Research Centre (MPRC), Department of Water and Environmental Engineering, Faculty of Civil & Environmental Engineering, Universiti Tun Hussein Onn Malaysia, 86400 Parit Raja, Batu Pahat, Johor, Malaysia;1. School of Electrical and Computer Engineering, Lorestan University, Khoramabad, Iran;2. Department of Electrical and Computer Engineering, Islamic Azad University, Arak, Iran;3. Department of Electrical and Computer Engineering, Iran University of Science and Technology, Tehran, Iran |
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| Abstract: | Structural control of quantum interference in the optical intrasubband absorption spectrum of GaAs/AlGaAs multi-quantum wells is investigated theoretically. Our study shows that pronounced Fano resonances are in general difficult to obtain in quantum well heterostructures, with a presence of distinct Fano resonance features being the exception rather than the rule. Guided by an analogy to Young’s double-slit experiment, we design increasingly improved structures to display Fano resonances. Best results are achieved in structures where there is strong overlap between the ground-state wavefunction and scattering states associated with the uncoupled continuum. Alternatively one may use ionization via two or more resonances. In this case, resonances should not be separated by more than 25 meV to give significant effects. Moreover, we show that resonance features may also be induced without potential barriers to a continuum merely via orthogonality between bound and excited states. |
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