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Electrodeposition of CdS quantum dots and their optoelectronic characterization by photoelectrochemical and scanning probe spectroscopies
Institution:1. Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, 76100, Israel;2. Department of Chemical Services, Weizmann Institute of Science, Rehovot, 76100, Israel;1. Department of Physics, Yuvaraja’s College (Autonomous), University of Mysore, Mysuru 570 005, India;2. Thin Film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004, India;3. Optoelectronic Convergence Research Centre, Department of Materials Science and Engineering, Chonnam National University, Gwangju 500-757, South Korea;4. Department of Physics, G.S.S.S. Institute of Engineering and Technology for Women, Mysuru 570016, India;5. Centre for Interdisciplinary Studies, D.Y. Patil University, Kolhapur 416 006, India;1. CIEMAT, Department of Energy, Avda. Complutense, 40 Ed. 42, 28040 Madrid, Spain;2. CIEMAT, Department of Technology, Avda. Complutense, 40 Ed. 36, 28040 Madrid, Spain;1. Department of Physics, Kongunadu Arts and Science College, Coimbatore, Tamilnadu 641029, India;2. Materials Science Division, Inter University Accelerator Centre, New Delhi 110067, India
Abstract:CdS quantum dots (QDs) have been electrodeposited onto textured gold substrates from a nonaqueous electrolyte containing Cd(ClO4)2and elemental S. The initial deposit consisted of very small (about 3 nm) nanocrystals of CdS which were partially oriented with the Au substrate. With increasing deposit thickness, the crystal size increased and the degree of orientation decreased. Photocurrent spectroscopy and IV spectroscopy, using a conducting scanning force microscope tip, were used to measure the CdS bandgap variations due to size quantization. The latter method also revealed room temperature conductivity peaks assigned to Coulomb charging of the QDs and evidence for charge tunneling into higher discrete energy levels.
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