| Abstract: | InAs co‐doped ZnO films were grown on sapphire substrates by pulsed laser deposition. The grown films have been characterized using X‐ray diffraction (XRD), Hall effect measurements, Atomic force microscope (AFM) and Field emission scanning electron microscope (FESEM) in order to investigate the structural, electrical, morphological and elemental properties of the films respectively. XRD analysis showed that all the films were highly orientated along the c‐axis. It was observed from Hall effect measurements that InAs co‐doped ZnO films were of n‐type conductivity. In addition, the presence of In and As has been confirmed by Energy dispersive X‐ray analysis. AFM images revealed that the surface roughness of the films was decreased upon the co‐doping. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
