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Band-mixing and strain effects in InAs/GaAs quantum rings |
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| Authors: | B. Lassen M. WillatzenD. Barettin |
| Affiliation: | The University of Southern Denmark, The Mads Clausen Institute, Alsion 2, 6400 Sonderborg, Denmark |
| Abstract: | We analyze for the first time the coupled influence of band mixing, strain, and piezoelectricity on electronic structure, eigenstates, and optical transition strengths for InAs/GaAs quantum-ring structures. It is shown that band mixing and strain alter the level energies and optical absorption coefficients significantly. |
| Keywords: | Semiconductors Confined systems Quantum rings Band-mixing Strain and piezoelectric effects Absorption |
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