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Enhanced ESD properties of GaN-based light-emitting diodes with various MOS capacitor designs |
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| Authors: | PC Tsai WR Chen YK Su |
| Institution: | 1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, ROC;2. Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan, ROC;3. Department of Electronic Engineering, National Formosa University, Yunlin 632, Taiwan, ROC;4. Department of Electrical Engineering, Kun Shan University, Tainan 710, Taiwan, ROC |
| Abstract: | High electrostatic discharge (ESD) protection of GaN-based light-emitting diodes (LEDs) has been developed using a metal–oxide semiconductor (MOS) capacitor. This structure is realized by adopting various metal electrode patterns. The MOS capacitor can be implemented by extending the metal line directly from the p-type electrode to the top surface of an SiO2-capped n-GaN layer near the vicinity of the n-type electrode. By connecting a MOS capacitor in parallel with the GaN-based LED, the negative ESD strike could be significantly increased from 385 to 1075 V of human body mode (HBM). |
| Keywords: | GaN LED MOS Electrostatic discharge (ESD) Human body model (HBM) |
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