Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation

In Single Gate HEMT (SGHEMT) shortening of gate length (_Lg)$\left(L_g\right)$ below 100 nm leads to reduction in Transconductance (_gm)$\left(g_m\right)$, which reduces the unloaded voltage gain (_gm/_gd)$(g_m/g_d)$ of the device, thereby reducing the maximum frequency of oscillation (_fmax)$\left(f_{max}\right)$. The main reason for this reduction in _gm$g_m$ with _Lg$L_g$ in the Single Gate HEMT (SGHEMT) is its inability to maintain the desired channel aspect ratio (α$\alpha$). At such a miniaturization level, α$\alpha$ not only depends on the channel depth (d)$\left(d\right)$ but also on the channel thickness (_dc)$\left(d_c\right)$ of the device 5]. Moreover, the variation of _dc$d_c$ may switch the device characteristics from quantum regime to classical regime  and . The Double Gate HEMT (DGHEMT)  and  has emerged as a solution for further reduction in _Lg$L_g$ and provides enhancements over SGHEMT by virtue of its double gate and also for same _dc$d_c$ due to double heterojunctions, which virtually increases the value of α$\alpha$. In the present work, extensive simulation work has been carried out using ATLAS device simulator 35] in order to study the effect of _dc$d_c$ and _Lg$L_g$ on DGHEMT and SGHEMT. An analytical model has also been proposed for SGHEMT and DGHEMT to incorporate the effect of variation of _dc$d_c$ and _Lg$L_g$.