| 低磁控溅射率MCP防离子反馈膜工艺研究 |
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| 引用本文： | 朱宇峰,张太民,聂晶,师宏立.低磁控溅射率MCP防离子反馈膜工艺研究[J].应用光学,2008,29(3):360-363. |
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| 作者姓名： | 朱宇峰 张太民 聂晶 师宏立 |
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| 作者单位： | 西安应用光学研究所,第二研究室,微光夜视技术国防科技重点实验室,陕西,西安,710065 |
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| 摘 要： | 为消除反馈正离子对三代微光夜视器件光阴极的有害轰击，提高微光像增强器的工作寿命，开展了低磁控溅射率法沉积微通道板（MCP）Al2O3防离子反馈膜的工艺研究。通过优化制备工艺，获得了制备MCP防离子反馈膜的最佳沉积条件：溅射电压1000V，溅射气压(4～5)×10-2 Pa，沉积速率0.5nm/min等。研究结果表明：在此工艺条件下，能够制备出均匀、致密且通孔满足质量要求的MCP防离子反馈膜。如果偏离这一最佳工艺条件，制备出的MCP防离子反馈膜膜层疏松、不连续，且通孔不能满足要求。
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| 关 键 词： | 磁控溅射 微通道板（MCP） 防离子反馈膜 |
| 文章编号： | 1002-2082(2008)03-0360-04 |
| 收稿时间： | 2007/12/13 |
| 修稿时间： | 2007年12月13 |
Preparation of ion-feedback barrier film on MCP |
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| ZHU Yu-feng,ZHANG Tai-min,NIE Jing,SHI Hong-li.Preparation of ion-feedback barrier film on MCP[J].Journal of Applied Optics,2008,29(3):360-363. |
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| Authors: | ZHU Yu-feng ZHANG Tai-min NIE Jing SHI Hong-li |
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| Institution: | Key Laboratory of Low-Light-Level Technology of COSTIND,Department of LLL Technology,Xi′an Institute of Applied Optics, Xi′an 710065,China |
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| Abstract: | To eliminate the bombardment of feedback ion to a photocarhode of a Gen. Ⅲ LLL night vision system and increase its operating lifetime,the preparation technique of depositing a Al2O3 ion-feedback barrier film on MCP was investigated by low-magnetron sputtering technique. The optimal depositon conditions for preparing the ion-feedback barrier film on MCP were obtained,such as operating voltage of 1 000 V,sputtering pressure of (4～5) × 10－2Pa and deposition rate of 0.5 nm/min. The results show that the ion-feedback barrier film deposited under this optimal conditions can meet the uniformity,compactness and less pinhole requirements. |
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| Keywords: | magnetron sputtering microchannel plate ion-feedback barrier film |
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