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Rapid thermal annealing effects on the structural and optical properties of ZnO films deposited on Si substrates |
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| Authors: | Yueh-Chien Lee Sheng-Yao Hu Kwong-Kau Tiong Yen-Ting Chen Jyh-Wei Lee Jyi-Lai Shen |
| Affiliation: | a Department of Electronic Engineering and Research Center for Micro/Nano Technology, Tungnan University, Taipei, Taiwan, ROC b Department of Electrical Engineering, Tung Fang Institute of Technology, Hunei Township, Kaohsiung County, Taiwan, ROC c Department of Electronic Engineering, National Formosa University, Yunlin, Taiwan, ROC d Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan, ROC e Graduate Institute of Electro-Optical Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan, ROC f Department of Mechanical Engineering and Research Center for Micro/Nano Technology, Tungnan University, Taipei, Taiwan, ROC |
| Abstract: | The structural and optical properties of ZnO films deposited on Si substrate following rapid thermal annealing (RTA) have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), and photoluminescence (PL) measurements. After RTA treatment, the XRD spectra have shown an effective relaxation of the residual compressive stress, an increase of the intensity and narrowing of the full-width at half-maximum (FWHM) of the (0 0 2) diffraction peak of the as-grown ZnO film. AFM images show roughening of the film surface due to increase of grain size after RTA. The PL spectrum reveals a significant improvement in the UV luminescence of ZnO films following RTA at 800 °C for 1 min. |
| Keywords: | 42.70.&minus a 78.30.Fs 78.55.&minus m |
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