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Visualization of space charge field effect on excitons in a GaAs quantum dot by near-field optical wavefunction mapping |
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| Authors: | Yoshiaki Sugimoto Nobuhiro Tsumori Shintaro Nomura Toshiharu Saiki |
| Institution: | (1) School of Integrated Design Engineering, Keio University, Yokohama 223-8522, Japan;(2) Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan;(3) Kanagawa Academy of Science and Technology, Kawasaki 213-0012, Japan |
| Abstract: | Near-field photoluminescence (PL) imaging spectroscopy was used to investigate multi-exciton and charged-exciton states confined in a single GaAs interface fluctuation quantum dot. We determined the origin of peaks in the PL spectra by employing a wavefunction mapping technique. We observed distortion of the exciton wavefunction due to the electric field produced by an excess electron at a nearby confined state. Near-field wavefunction mapping was demonstrated to be a powerful tool for visualizing the local environment, which affects the emission properties of quantum dots. |
| Keywords: | photoluminescence imaging spectroscopy interfacial fluctuation quantum dot near-field scanning microscope multi exciton charged exciton finite-difference time-domain calculation method |
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