InGaAsP multiple quantum well edge-emitting light-emitting diode showing low coherence characteristics using selective-area metalorganic vapor phase epitaxy

Low coherence multiple-quantum well edge-emitting light-emitting diodes were obtained using selective-area metalorganic vapor-phase epitaxial growth, which utilized growth rate enhancement on an open stripe region between mask stripes. An optical absorption region, which was controlled by selective-area growth, was introduced to suppress optical feedback. At a driving current of 100 mA and an ambient temperature of 25°C, a power of 55 μW was coupled into a single-mode fiber, and a broad spectrum without spectral ripple was observed. Low coherence characteristics and very small temperature dependence were obtained in the temperature range from -40°C to 85°C. The modulation bandwidth was 210 MHz at a bias current of 100 mA.