Phase transformations under indenter in silicon bombarded by low-intensity flux of beta particles |
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| Authors: | A A Dmitrievskii N Yu Efremova Yu I Golovin and A V Shuklinov |
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| Institution: | (1) Department of Ceramics and Materials Engineering, Rutgers University, 607 Taylor Road, 08854 Piscataway, NJ, USA |
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| Abstract: | The phase composition inside and outside of impressions formed under indentation of silicon in the presence of low-intensity
beta radiation is studied. Comparative analysis of obtained spectra makes it possible to conclude that the contribution of
phase transformations under indenter during W-shaped variation of silicon microhardness induced by beta radiation is insignificant. Consequently, nonmonotonic silicon
softening is caused by the transformation of the point defect (intrinsic and radiation-induced) subsystem in conditions of
low dislocation mobility at room temperature. |
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