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锡溶液中半导体单晶CuSi2P3的生长与结构分析
引用本文:M.S.OMAR. 锡溶液中半导体单晶CuSi2P3的生长与结构分析[J]. 人工晶体学报, 1998, 27(2): 5
作者姓名:M.S.OMAR
作者单位:Department of Physics,College of Science, University of Salahaddin,ABBLL,IRAQ
基金项目:College of Electronic Ergineering,,
摘    要:


关 键 词:I-IV2-V3 type semiconductor  CuSi2P3 crystal  Tin  crystal growth from solution  X-ray powder analysis

Tin Solution Growth and the Analysis of Single Crystals of CuSi2P3 Semiconductor
M.S.OMAR. Tin Solution Growth and the Analysis of Single Crystals of CuSi2P3 Semiconductor[J]. Journal of Synthetic Crystals, 1998, 27(2): 5
Authors:M.S.OMAR
Abstract:
Single crystals of CuSi2P3 as long as 1cm has been grown by using tin solution growth. X-ray powder photography technique showed that only CuSi2P3 can grow as a pure material without any exchanges of Si with Sn. The structure is in the form of Fcc with a lattice parameters of a=0.5248nm. Electron probemicro anaiysis (EPMA) has supported the X-ray data in regarding the single phase of this compound grown by solution growth.
Keywords:I-IV2-V3 type semiconductor  CuSi2P3 crystal  Tin  crystal growth from solution  X-ray powder analysis
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