Concentration dependence of the coherent contribution from domain walls to electrical resistance |
| |
| Authors: | A. I. Morosov |
| |
| Affiliation: | (1) Moscow State Institute of Radioengineering, Electronics, and Automation (Technical University), pr. Vernadskogo 78, Moscow, 119454, Russia |
| |
| Abstract: | ![]()
The contribution from the Levy-Zhang mechanism to the magnetoresistance of a stripe domain structure is analyzed, and the dependence of this contribution on the domain wall concentration is found for the cases where the characteristic spin-diffusion length either exceeds or is far less than the domain structure period. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
