| 半导体激光器的M2因子可以小于1 |
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| 引用本文： | 徐锦心 赵道木 周国泉,王绍民.半导体激光器的M2因子可以小于1[J].光子学报,2001,30(3):381-385. |
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| 作者姓名： | 徐锦心 赵道木 周国泉 王绍民 |
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| 作者单位： | 徐锦心（浙江大学物理系，杭州 310028）;赵道木（浙江大学物理系，杭州 310028）;周国泉（浙江大学物理系，杭州 310028）;王绍民（浙江大学物理系，杭州 310028） |
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| 基金项目： | 国家自然科学基金(19974038)资助项目 |
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| 摘 要： | 根据Porras的非傍轴矢量矩理论,对双异质结半导体激光器的光束质量进行了研究.结果表明,在有源层厚度da远小于波长λ的条件下,半导体激光器的M2因子可以小于1,并且没有下限.
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| 关 键 词： | 双异质结半导体激光器 非傍轴矢量矩理论 光束质量因子 |
| 收稿时间： | 2000-07-13 |
| 修稿时间： | 2000年7月13日 |
THE BEAM QUALITY FACTOR M2
OF SEMICONDUCTOR LASERS COULD BE LESS THAN 1 |
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| Xu Jinxin.THE BEAM QUALITY FACTOR M2
OF SEMICONDUCTOR LASERS COULD BE LESS THAN 1[J].Acta Photonica Sinica,2001,30(3):381-385. |
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| Authors: | Xu Jinxin |
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| Institution: | Department of Physics, Zhejiang University, Tian Mu Shan Road, Hangzhou 310028 |
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| Abstract: | The beam quality of double-heterostructure injection lasers was studied based on non paraxial vectorial moment theory developed by Porras.Some results we obtained after a series of calculation are different from conventional recognition on beam quality of semiconductor laser.It is alsofound its M2 factor could be less than 1 and has no lower bound for the active layer thickness da far less than wavelength λ. |
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| Keywords: | Double-heterostructure injection laser Non-paraxial vectorial moment theory Beam quality factor |
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