| GaAs半导体中三光子吸收的研究 |
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| 引用本文： | 徐大纶,程昭.GaAs半导体中三光子吸收的研究[J].光子学报,1995,24(2):97-102. |
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| 作者姓名： | 徐大纶 程昭 |
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| 作者单位： | 中国科学院西安光学精密机械研究所瞬态光学技术国家重点实验室 |
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| 摘 要： | 本文利用全量子理论推导了半导体中多光子吸收跃迁速率的一般表达式。对各种模型计算了本征GaAs在λ=2.06um下的三光子吸收系数。实验上采用非线性光电导和非线性光透射技术,测量了GaAs中三光子吸收系数。
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| 关 键 词： | 三光子吸收 非线性光电导 非线性光透射 |
| 收稿时间： | 1994-02-19 |
RESEARCH ON THREE-PHOTON ABSORPTION IN GaAs SEMICONDUCTOR |
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| Xu Dalun,Cheng Zhao,Wang Liming,Hou Xun.RESEARCH ON THREE-PHOTON ABSORPTION IN GaAs SEMICONDUCTOR[J].Acta Photonica Sinica,1995,24(2):97-102. |
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| Authors: | Xu Dalun Cheng Zhao Wang Liming Hou Xun |
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| Institution: | State Key Laboratory of Transient Optics and Technology, Xi’an Institute of Optics and Precision Mechanics, Academia Sinica, Xi’an 710068 |
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| Abstract: | The general expression of transition rate for triphoton absorption in semiconductors istheoretically calculated by use of the all-quantum theory in this paper. The three photon absorptioncoefficients of intrinsic GaAs at 2.06pmare separately calculated for various models. Using nonlineartransmission(NLT)and nonlinear photo-conductivity(NLP)techniques,the three photon absorptioncoefficients in the GaAs is experimentally measured. |
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| Keywords: | Three-photon absorption NLP NLT |
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