Transmission electron microscopy study of defects in Sn-doped GaAs films grown by molecular beam epitaxy |
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| Authors: | S. H. Chen C. B. Carter P. Enquist |
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| Affiliation: | (1) Department of Materials Science and Engineering, Bard Hall, Cornell University, 14853 Ithaca, NY, USA;(2) School of Electrical Engineering, Phillips Hall, Cornell University, 14853 Ithaca, NY, USA;(3) Present address: Research Laboratories, Eastman Kodak Company, Building 81, 14650 Rochester, NY, USA |
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| Abstract: | Films of GaAs, heavily doped with Sn, which have been grown by molecular-beam epitaxy are found to contain single-crystal Sn particles situated in the nearsurface region of the epilayer GaAs. The morphology and chemical composition of the particles have been examined by using cross-section transmission electron microscopy combined with energy-dispersive x-ray spectroscopy. Different growth conditions were used to study the Sn-particle formation and high-resolution transmission electron microscopy was used to investigate microstructures. The observations are discussed in terms of several models previously proposed for these phenomena. |
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| Keywords: | 68.55Jh 81.30Fb 68.35 |
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