Barrier-disorder induced exciton relaxation via LO-phonons in GaAs/Al x Ga1−x As multiple quantum wells |
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| Authors: | N. N. Ledentsov R. Nötzel P. S. Kop'ev K. Ploog |
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| Affiliation: | (1) Max-Planck-Institut für Festkörperforschung, W-7000 Stuttgart 80, Fed. Rep. Germany;(2) Present address: A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia;(3) Present address: Paul-Drude Institut für Festkörperelektronik, O-1086 Berlin, Fed. Rep. Germany |
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| Abstract: | Hot exciton relaxation is observed in GaAs/AlxGa1–xAs multiple quantum wells. The photolumnescence excitation spectra of the localized exciton emission at low temperatures and excitation densities are composed of narrow equidistant peaks exactly separated by the GaAs LO-phonon energy (36 meV). The relaxation mechanism via LO-phonons is found to be important for localized excitons in multiple quantum wells with GaAs layer thicknesses of about 50 Å, where pronounced alloy fluctuations in the barriers provide a strong additional lateral potential which suppresses the dissociation of hot excitons. |
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| Keywords: | 73.20.Dx 78.55.Cr 78.65.Fa |
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