Facets formation of pyramidal Si nanocrystals selectively grown on Si(0 0 1) windows in ultrathin SiO2 films

We have used in situ scanning tunneling microscopy (STM) to study the facet formation in the selective growth of pyramidal Si nanocrystals on Si(0 0 1) windows in ultrathin 0.3-nm-thick SiO₂ films. Broad (0 0 1) surfaces developed as the top of the crystals, and {1, 1, (2n+1)} (n=1–6) facets formed the sidewalls. As growth continued, the slope angle of sidewall facets increased, and {1, 1, 9} and {1, 1, (2m+1)} (0 <m < 4) facets often came to coexist on the sidewalls. On well-oriented Si(0 0 1) surfaces, layer-by-layer growth in the 0 0 1] direction was dominant. On vicinal Si(0 0 1) surfaces, lateral step growth took place in the initial stage, and the layer-by-layer growth was suppressed until after a large (0 0 1) surface had formed as the top of the crystal.