| Antiphase State in Passively Q-Switched Yb：YAG Microchip Lasers with a Nd,Cr：YAG as Saturable Absorber |
| |
| 引用本文： | 顾学文,张秋琳,张东香,冯宝华,张晓华,张光寅.Antiphase State in Passively Q-Switched Yb：YAG Microchip Lasers with a Nd,Cr：YAG as Saturable Absorber[J].中国物理快报,2005,22(6):1416-1419. |
| |
| 作者姓名： | 顾学文 张秋琳 张东香 冯宝华 张晓华 张光寅 |
| |
| 作者单位： | [1]TheMOEKeyLaboratoryofAdvancedTechniqueandFabricationforWeak-LightNonlinearPhotonicsMaterials,andTianjinKeyLaboratoryofPhotonicsMaterialsandTechnologyforInformationScience,TedaAPS,NankaiUniversity,Tianjin300457 [2]LaboratoryofOpticalPhysics,InstituteofPhysics,ChineseAcademyofSciences,Beijing100080 |
| |
| 摘 要： | We experimentally investigate the antiphase dynamics phenomenon that occurs in a diode-pumped passively Q-switched Yb:YAG multimode laser with a Nd,Cr:YAG saturable absorber. Due to the effect of spatial hole burning, the multimode lasers with one, two, or three modes at different pump power are observed, and the pulses sequences display classic antiphase dynamics.
|
| 关 键 词： | 逆相态 被动Q-开关 镱 钇铝石榴石 固体微芯片激光器 饱和吸收器 |
| 本文献已被 维普 等数据库收录！ |
|
