| p-AlGaN电子阻挡层Al组分对Si衬底绿光LED性能影响的研究 |
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| 引用本文： | 毛清华,江风益,程海英,郑畅达.p-AlGaN电子阻挡层Al组分对Si衬底绿光LED性能影响的研究[J].物理学报,2010,59(11):8078-8082. |
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| 作者姓名： | 毛清华 江风益 程海英 郑畅达 |
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| 作者单位： | 南昌大学教育部发光材料与器件工程研究中心,南昌 330047 |
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| 基金项目： | 教育部长江学者与创新团队发展计划(批准号:IRT0730),国家高新技术研究发展计划(批准号:2006AA03A128),江西省研究生创新基金(批准号:YC09A024)资助的课题. |
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| 摘 要： | 在Si(111)衬底上利用MOCVD方法生长了具有不同Al组分p-AlGaN电子阻挡层的绿光InGaN/GaN LED结构,并对其光电性能进行了研究.结果表明,不同Al组分样品的量子效率随电流密度的变化规律呈现多样性.在很低电流密度范围,LED量子效率随Al组分升高而下降;在较高电流密度范围,LED量子效率随Al组分升高而升高,即此时缓解了量子效率随电流密度增大而衰退的速率(即droop效应);但随着电流密度的进一步升高,反而加快了量子效率衰退的速率.这些现象解释为不同Al组分的p-AlGaN对空穴和电子
关键词：
氮化镓
p-AlGaN
绿光LED
量子效率
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| 关 键 词： | 氮化镓 p-AlGaN 绿光LED 量子效率 |
| 收稿时间： | 2010-01-25 |
| 修稿时间： | 3/8/2010 12:00:00 AM |
p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substrates |
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| Mao Qing-Hua,Jiang Feng-Yi,Cheng Hai-Ying,Zheng Chang-Da.p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substrates[J].Acta Physica Sinica,2010,59(11):8078-8082. |
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| Authors: | Mao Qing-Hua Jiang Feng-Yi Cheng Hai-Ying Zheng Chang-Da |
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| Institution: | Education Ministry Engineering Reserch Center for Luminescence Matirials and Devices,Nanchang University,Nanchang 330047,China;Education Ministry Engineering Reserch Center for Luminescence Matirials and Devices,Nanchang University,Nanchang 330047,China;Education Ministry Engineering Reserch Center for Luminescence Matirials and Devices,Nanchang University,Nanchang 330047,China;Education Ministry Engineering Reserch Center for Luminescence Matirials and Devices,Nanchang University,Nanchang 330047,China |
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| Abstract: | We grow green light emitting diodes (LEDs) on Si(111) substrates with p-AlGaN electron blocking layers (EBLs) which have different Al frations. The results show that the variation of quantum efficiency with current density displays a diversity. At lower current densities,the quantum efficiency of LED increases with Al fraction decreasing, at higher current densities, however, the quantum efficiency of LED increases with Al fraction decreasing, which is attributed to the complicated mechnism when electron and hole are recombined in the quantum well. |
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| Keywords: | GaN p-AlGaN green light emitting diodes quantum efficency |
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