Photoluminescence of chemical solution-derived amorphous ZnO layers prepared by low-temperature process |
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| Institution: | 1. Department of Photonic Engineering, Division of Electronic & Photonic Engineering, Honam University, 59-1 Seobong-dong, Gwangsan-gu, Gwangju 506-714, Republic of Korea;2. Department of Photonic Engineering, College of Engineering, Chosun University, 375 Seosuk-dong, Dong-gu, Gwangju 501-759, Republic of Korea;3. Department of Biomedical Engineering and Institute of Photoelectronic Technology, Nambu University, 864-1 Wolgye-dong, Gwangsan-gu, Gwangju 506-824, Republic of Korea |
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| Abstract: | Growth characteristic and optical properties of the amorphous ZnO thin films prepared on soda-lime–silica glass substrates by chemical solution process at 100 and 200 °C were investigated by using X-ray diffraction analysis, scanning probe microscope, ultraviolet spectrophotometer, and photoluminescence. The films exhibited an amorphous pattern even when finally heat treated at 100–200 °C for 60 min. The photoluminescence spectrum of amorphous ZnO films shows a strong near-band-edge emission, while the visible emission is nearly quenched. |
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