Room temperature photoluminescence property of Mo-doped In2O3 thin films |
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| Institution: | 1. Thin Film Laboratory, Department of Physics, Vellore Institute of Technology, Vellore 632 014, India;2. Department of Physics, Sri Venkateswara University, Tirupati 517 502, India;3. Department of Ceramic Engineering, Yonsei University, Seoul 120-749, Republic of Korea |
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| Abstract: | Mo-doped In2O3 thin films have been prepared on glass substrates using an activated reactive evaporation method and systematically studied the effect of oxygen partial pressure on the structural, optical, electrical and photoluminescence properties of the films. The obtained films are highly transparent and conductive. The films exhibited the lowest electrical resistivity of 5.2 × 10?4 Ω cm, with an average optical transmittance of 90% in the visible region. An intensive photoluminescence emission peaks were observed at 415 and 440 nm. |
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