Shot noise fluctuations in disordered graphene nanoribbons near the Dirac point |
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| Institution: | 1. The Department of Physics, Guangxi Medical University, Nanning, Guangxi 530021, China;2. School of Physics and Electronics, Yancheng Teachers University, Yancheng 224051, PR China;1. Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar, India;2. Department of Physics, University of the Free State, Bloemfontein, South Africa;1. Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica, Chile;2. Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan, Armenia;3. National University of Architecture and Construction of Armenia, Teryan 105, 0009 Yerevan, Armenia;4. SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom |
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| Abstract: | Random fluctuations of the shot-noise power in disordered graphene nanoribbons are studied. In particular, we calculate the distribution of the shot noise of nanoribbons with zigzag and armchair edge terminations. We show that the shot noise statistics is different for each type of these two graphene structures, which is a consequence of the presence of different electron localizations: while in zigzag nanoribbons electronic edge states are Anderson localized, in armchair nanoribbons edge states are absent, but electrons are anomalously localized. Our analytical results are verified by tight binding numerical simulations with random hopping elements, i.e., off diagonal disorder, which preserves the symmetry of the graphene sublattices. |
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| Keywords: | Shot noise power Graphene disordered nanoribbons Electron localization |
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