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On the photon-drag effect of photocurrent of surface states of topological insulators
Affiliation:1. Department of Mathematics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi Arabia;2. Department of Mathematics, Faculty of Science, Kafrelsheikh University, Kafrelsheikh 33516, Egypt;1. Department of Physics, University of Pretoria, Pretoria 0002, South Africa;2. College of Graduate Studies, University of South Africa, UNISA 0003 Pretoria, South Africa;3. National Institute for Theoretical Physics, Johannesburg 2000, South Africa;1. Department of Theoretical Physics, V. Lashkaryov Institute of Semiconductor Physics, NASU, Pr. Nauki 41, Kiev 03028, Ukraine;2. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-7911, USA;1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;2. Key Laboratory of Information Materials of Sichuan Province & School of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu 610041, China
Abstract:
The photocurrent of surface states of topological insulator due to photon-drag effect is computed, being based on pure Dirac model of surface states. The scattering by disorder is taken into account to provide a relaxation mechanism for the photocurrent. The Keldysh–Schwinger formalism has been employed for the systematic calculation of photocurrent. The helicity dependent photocurrent of sizable magnitude transverse to the in-plane photon momentum is found, which is consistent with experimental data. Other helicity independent photocurrents with various polarization states are also calculated.
Keywords:Photon-drag effect  Photocurrent  Surface states  Topological insulators  Keldysh–Schwinger formalism
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