Tuning the electronic properties of single-walled SiC nanotubes by external electric field |
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| Institution: | 1. School of Physical Electronics, Joint Laboratory for Police Equipment Research, University of Electronic Science and Technology of China, Chengdu 610054, PR China;2. School of Physics and Mech-tronic Engineering, Sichuan University of Arts and Science, Dazhou 635000, PR China;1. School of Materials Science and Engineering, Shandong Jianzhu University, Fengming Road #1000, Jinan 250101, PR China;2. Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY 40506, USA;3. Beijing Aeronautical Manufacturing Technology Research Institute, Beijing 100024, PR China;1. Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan, Armenia;2. National University of Architecture and Construction of Armenia, Teryan 105, 0009 Yerevan, Armenia;3. Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica, Chile;4. SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom;1. Department of Physics and Engineering, Moldova State University, Chisinau MD-2009, Republic of Moldova;2. Institute of Applied Physics, Moldavian Academy of Science, Chisinau MD-2028, Republic of Moldova;3. Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea;1. Department of Physics and Astronomy, University of Manitoba, Winnipeg, Canada R3T 2N2;2. Department of Physics/Theoretical Physics, University of Oulu, Oulu FIN-90014, Finland;1. National Institute for Research and Development of Isotopic and Molecular Technologies, 67-103 Donat Street, RO-400293 Cluj-Napoca, Romania;2. Center for Integrative Nanotechnology Sciences, University of Arkansas at Little Rock, 2801 South University Ave, Little Rock 72204, USA;3. Department of Chemistry, University of Arkansas at Little Rock, 2801 South University Ave, Little Rock 72204, USA;1. College of Chemistry, Chemical Engineering and Environmental Engineering, Liaoning Shihua University, Fushun 113001, PR China;2. School of New Energy, Shenyang Institute of Engineering, Shenyang 110136, PR China;3. College of Petroleum Engineering, Liaoning Shihua University, Fushun 113001, PR China |
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| Abstract: | The electronic properties of SiC nanotubes (SiCNTs) under external transverse electric field were investigated using density functional theory. The pristine SiCNTs were semiconductors with band-gaps of 2.03, 2.17 and 2.25 eV for (6,6), (8,8) and (10,10) SiCNTs, respectively. It was found the band gaps was reduced with the external transverse electric filed applied. The (8,8) and (10,10) SiCNTs changed from semiconductor to metals as the intensity of electric field reached 0.7 and 0.5 V/Å. The results indicate that the electronic properties of SiCNTs can be tuned by the transvers electric field with integrality of the nanotubes. |
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| Keywords: | Density functional theory SiCNTs Transvers electric field Electronic properties |
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