Bound to continuum intersubband transition optical properties in the strain reducing layer-assisted InAs quantum dot structure |
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| Affiliation: | 1. NEST, Scuola Normale Superiore, and Istituto Nanoscienze-CNR, I-56126 Pisa, Italy;2. MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington 6140, New Zealand;3. NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56126 Pisa, Italy;1. Dipartimento di Matematica e Fisica, Università Roma Tre, Via della Vasca Navale 84, 00146 Roma, Italy;2. Nano-Bio Spectroscopy Group, Departamento de Fìsica de Materiales, Universidad del Paìs Vasco UPV/EHU, E-20018 San Sebastiàn, Spain;1. Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395, Japan;2. Department of Information Electronics, Fukuoka Institute of Technology, 3-30-1 Wajiro-higashi, Higashi-ku, Fukuoka 811-0295, Japan;3. Department of Physics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan;4. Research Center for Quantum Nano-Spin Sciences, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581, Japan |
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| Abstract: | 
In this paper, the impact of wetting layer, strain reducing layer and dot height on the electronic, linear and nonlinear optical properties of bound to continuum states transitions are investigated in a system of InAs truncated conical shaped quantum dot covered with the InxGa1−x As strain reducing layer. The electronic structure, containing two main states of S and wetting layer states (WL), was calculated by solving one electronic band Hamiltonian with effective-mass approximation. The results reveal that the presence of the strain reducing layer in the structure extends the quantum dot emission to longer wavelength which is reported as a red-shift of the photoluminescence (PL) peak in the experimental measurement. This study also highlights the possibility of improving the intersubband optical properties based on the significant size-dependence of the three layer dot matrix by employing the strain reducing and wetting layers. According to this simulation, relatively tall dots on the thick wetting layer introduce the optimized structure size for practical applications to meet the SRL assisted enhanced dot structure. |
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| Keywords: | InAs quantum dot Wetting layer Strain Strain reduced layer DWELL structure |
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