Quenching of Photoluminescence in ZnO QDs Decorating Multiwalled Carbon Nanotubes

We report the controlled growth of ZnO quantum dots (QDs) on the sidewalls of multiwalled carbon nanotubes (MWCNTs) by a one‐step process and study the effect on the photoluminescence (PL) properties of the ZnO QDs‐MWCNT composite. The PL intensity of the composite is quenched and the lifetime is reduced compared to the only ZnO QDs. The origin of the PL quenching is discussed in terms of energy transfer, which is examined by varying the density and size of ZnO QDs by changing the molar concentration of the precursor solution for ZnO and the amount of MWCNT.