|
|||||
|
|
AES depth profiles of thin SiC-layers – simulation of ion beam induced mixing |
|
| Authors: | G. Ecke H. Rößler V. Cimalla J. Liday |
| Affiliation: | TU Ilmenau, Institut für Festk?rperelektronik, Postfach 0565, D-98684 Ilmenau, Germany, DE Slovak Technical University, Microelectronics Department, Ilkovi ?ova 3, SL-81219 Bratislava, Slovakia, XX |
| Abstract: | |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |