Transport and percolation in a low-density high-mobility two-dimensional hole system |
| |
Authors: | Manfra M J Hwang E H Das Sarma S Pfeiffer L N West K W Sergent A M |
| |
Institution: | Bell Laboratories, Alcatel-Lucent, Murray Hill, New Jersey 07974, USA. |
| |
Abstract: | We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime (p > or approximately4x10;{9} cm;{-2}), the nonmonotonic temperature dependence ( approximately 50-300 mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of T=50 mK, the conductivity versus density data indicate an inhomogeneity driven percolation-type transition to an insulating state at a critical density of 3.8x10;{9} cm;{-2}. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|