Graphene bilayer with a twist: electronic structure |
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Authors: | Lopes Dos Santos J M B Peres N M R Castro Neto A H |
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Institution: | CFP and Departamento de Física, Faculdade de Ciências, Universidade do Porto, 4169-007 Porto, Portugal. |
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Abstract: | We consider a graphene bilayer with a relative small angle rotation between the layers--a stacking defect often seen in the surface of graphite--and calculate the electronic structure near zero energy in a continuum approximation. Contrary to what happens in an AB stacked bilayer and in accord with observations in epitaxial graphene, we find: (a) the low energy dispersion is linear, as in a single layer, but the Fermi velocity can be significantly smaller than the single-layer value; (b) an external electric field, perpendicular to the layers, does not open an electronic gap. |
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