Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111) |
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引用本文: | 吴蕊,王立莉,张翼,马旭村,贾金锋,薛其坤.Atomic-Scale Study of Ge-Induced Incommensurate Phases on Si(111)[J].中国物理快报,2010(2):228-231. |
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作者姓名: | 吴蕊 王立莉 张翼 马旭村 贾金锋 薛其坤 |
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作者单位: | [1]Institute of Physics, Chinese Academy of Sciences, Beijing 100190 [2]Department of Physics, Tsinghua University, Beijing 100084 |
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基金项目: | Supported by the National Natural Science Foundation of China under Grant Nos 20733008 and 10904168, and the National Basic Research Program of China under Grant No 2009CB929404. |
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摘 要: | Two Ge-induced incommensurate phases, γ and β, on Si(111) are observed and studied by {/it in situ} scanning tunneling microscopy. The γ phase consists of aligned triangular domains whose stacking sequence is faulted with respect to the Si(111)-1×1 surface. The β phase consists of two kinds of triangular domains whose stacking sequences are faulted and unfaulted with respect to the Si(111)-1×1 surface, respectively. In the β phase, two types of domain walls, zigzag'' and face-to-face'', form to release the strain. The triangular domains all exhibit a quasi-1×1 hexagonal close-packed structure. By studying the structural evolution from magic clusters to incommensurate structures, the structure models for γ and β phases are proposed.
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关 键 词: | 原子尺度 六角密堆积结构 Si(111) 扫描隧道显微镜 诱导 锗硅 表面断裂 amp |
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