The influence of hydrogen on the growth of gallium catalyzed silicon oxide nanowires

In this paper, we report that amorphous silicon oxide nanowires can be grown in a large quantity by chemical vapor deposition with molten gallium as the catalyst in a flow of mixture of SiH₄, H₂ and N₂ at 600 °C. Meanwhile, when we grow these nanowires under the same conditions but without H₂, octopus-like silicon oxide nanostructures are obtained. The reasons and mechanisms for the growth of these nanowires and nanostructures are discussed. Blue light emission is observed from SiO_x nanowires, which can be attributed to defect centers of high oxygen deficiency. These SiO_x nanowires may find applications in nanodevices and reinforcing composites.