Raman scattering of Zn doped CuGaS2 layers grown by vapor phase epitaxy

Raman spectra for non-site-selectively and site-selectively Zn-doped CuGaS₂ layers grown by vapor phase epitaxy (VPE) were investigated. Although an appearance of characteristic Raman line(s) related with the doped Zn atom was not seen, an enhancement of the Raman intensity ratio of the highest LO mode to the A₁ mode (I_LO/I_A1) was observed. The site-selectively Zn-doped layers with p-type conductivity exhibited larger I_LO/I_A1 ratio compared to those with n-type conductivity. The observed correlation between the I_LO/I_A1 ratio and the peak energy of the photoluminescence characteristic for Zn-doped p-type samples (L emission) suggests that the enhancement of I_LO/I_A1 is due to the increase of Zn atom substituting Ga site (Zn_Ga) which is acting as an acceptor.