Determination of electron effective mass from optical transition energy in InGaAs/InAlAs quantum wells |
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| Authors: | N Kotera K Tanaka |
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| Institution: | aKyushu Institute of Technology, Iizuka, Fukuoka 820-8502, Japan;bHiroshima City University, Asa-Minami, Hiroshima 731-3194, Japan |
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| Abstract: | Nonparabolic effective mass of conduction subbands in InGaAs/InAlAs quantum wells (QWs), lattice-matched to InP, was quantitatively obtained by analyzing interband-optical transition spectra. Thickness of InGaAs well was 5.3, 9.4, and  . Thickness of InAlAs barrier was about  , and each QW was independent. Excellent agreement was obtained between experimental mass and theoretical mass predicted by Kane's three-level band theory on bulk InGaAs, in a wide energy range of  from the bandedge. Method of experimental analysis on a relation between eigen energy and effective mass was described. |
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| Keywords: | Nonparabolicity Effective mass Eigen energy Quantum well |
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