Elemental composition of nanoclusters formed by pulsed irradiation with low-energy ions during Ge/Si epitaxy |
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| Authors: | A V Dvurechenskii Zh V Smagina V A Zinov’ev V A Armbrister V A Volodin M D Efremov |
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| Institution: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 630090, Russia |
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| Abstract: | Multilayer silicon structures with built-in layers of Ge nanoclusters were studied experimentally by Raman light scattering. The built-in layers were formed by the pulsed action of a low-energy beam of intrinsic ions during molecular-beam epitaxy. It is found that the ion-stimulated nucleation and the subsequent growth make it possible to obtain Ge nanoclusters almost free of Si. |
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