| GaAs(100)衬底上ZnSe薄膜的热壁束外延生长 |
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| 引用本文： | 王杰,吕宏强,刘咏,王迅,姚文华,沈孝良.GaAs(100)衬底上ZnSe薄膜的热壁束外延生长[J].物理学报,1992,41(11):1856-1861. |
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| 作者姓名： | 王杰 吕宏强 刘咏 王迅 姚文华 沈孝良 |
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| 作者单位： | (1)复旦大学分析测试中心,上海200433; (2)复旦大学物理系,上海200433 |
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| 摘 要： | 介绍热壁束外延法生长ZnSe/GaAs异质结工作。低能电子衍射和俄歇电子能谱对样品的原位检测表明,用此方法可以在GaAs(100)衬底上外延得到单晶的ZnSe(100)薄膜。当外延生长速率大时,Znse薄膜质量下降,样品的Raman谱中出现TO模。X射线衍射实验结果表明,这种外延膜质量的退化主要是由于在ZnSe(100)薄膜体内存在〈111〉方向的晶核。
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| 关 键 词： | 硒化锌 外延生长 半导体膜 薄膜 |
| 收稿时间： | 1991-11-11 |
HETEROEPITAXIAL GROWTH OF ZnSe ON GaAs(lOO) SUBSTRATE BY HOT WALL BEAM EPITAXY |
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| WANG JIE,Lü HONG-QIANG,LIU YONG,WANG XUN,YAO WEN-HUA,SHEN XIAO-LIANG.HETEROEPITAXIAL GROWTH OF ZnSe ON GaAs(lOO) SUBSTRATE BY HOT WALL BEAM EPITAXY[J].Acta Physica Sinica,1992,41(11):1856-1861. |
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| Authors: | WANG JIE Lü HONG-QIANG LIU YONG WANG XUN YAO WEN-HUA SHEN XIAO-LIANG |
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| Abstract: | ZnSe (100) single crystal films are grown by hot wall beam epitaxy on GaAs (100) substrate. The quality of films are examined by LEED and AES in situ. The films show sharp C(2×2) LEED pattern. When sample are prepared with high growth rate, the Raman spectra show that there are TO modes which are usually forbidden in ZnSe (100) films. ZnSe(100) films with <111> twin can be explained by the TO modes in the Raman spectra. This interpretation is supported by the result of XRD. |
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