Systematic study on the confinement structure design of 1.5-μm InGaAlAs/InP multiple-quantum-well lasers |
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Authors: | Y S Yong H Y Wong H K Yow and M Sorel |
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Institution: | 1.Center of Advanced Devices and Systems, Faculty of Engineering,Multimedia University,Cyberjaya,Malaysia;2.Optoelectronics Research Group, Department of Electronics and Electrical Engineering,University of Glasgow,Glasgow,UK |
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Abstract: | An in-dept analysis on the separate confinement heterostructure (SCH) design parameters of 1.5-μm InGaAlAs/InP multiple quantum-well
(MQW) lasers is reported. Theoretical calculations show a drastic enhancement on threshold current and slope efficiency from
step-index SCH (STEP-SCH) to graded-index SCH (GRIN-SCH) design, but the effect ceases beyond a critical number of grading
steps. This finding implies ease of the growth process and reduction in cost. The overall GRIN-SCH’s thickness is found to
exert great influence over the achievable laser’s threshold current and slope efficiency. An average of 27 mA threshold current
reduction and more than 32% of slope efficiency increment were achieved by optimizing the GRIN-SCH thickness. Increasing the
grading energy range of the GRIN-SCH decreases the slope efficiency, but is found to effectively reduce carrier leakage at
elevated temperature leading to a less temperature-sensitive threshold current MQW ridge lasers were fabricated and characterized
out of two laser materials, one with a reference STEP-SCH and another with a proposed optimized GRIN-SCH profile. The laser
with optimised SCH design has shown a 36% reduction in room temperature threshold current as compared to that with the STEP-SCH
design, which is in good agreement to the theoretical simulation. In addition, a record high characteristic temperature (T
0) of 105 K was obtained on the GRIN-SCH laser structure, which is more than three fold increment as compared to the STEP-SCH
design. |
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