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Amorphous semiconductor superlattices |
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| Authors: | B. Abeles T. Tiedje H.C. Stasiewski H.W. Deckman P.D. Persans K.S. Liang C.B. Roxlo |
| Affiliation: | Exxon Research and Engineering Co. Annandale, New Jersey 08801, USA |
| Abstract: | The structural and electronic properties of a new class of superlattices consisting of layers of a-Si:H 8–1200 thick interleaved with a-Ge:H, a-Si1?xCx:H or a-SiNx:H are reviewed. |
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