Single quantum well transistor with modulation doped AlGaAs/GaAs/AlGaAs structures |
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| Authors: | K. Miyatsuji H. Hihara C. Hamaguchi |
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| Affiliation: | Department of Electronics, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan |
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| Abstract: | Self-consistent calculations have been performed to obtain the wave functions and energy subbands of the two-dimensional electrons confined in a single quantum well of a AlxGa1?xAs/GaAs/AlxGa1?xAs heterostructure. The wave functions of the two-dimensional electron gas are found to be easily controlled by an external gate voltage applied between the AlGaAs-barriers, indicating a capability of fabricating a novel quantum well device, a modulation-doped single quantum well transistor. |
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