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| In0.15Ga0.85As—GaAs应力层多量子阱中束缚子带—连续带跃迁 | |
| 引用本文： | 方晓明,沈学础,侯宏启,冯巍,周均铭. In0.15Ga0.85As—GaAs应力层多量子阱中束缚子带—连续带跃迁[J]. 物理学报, 1990, 39(4): 627-631 |
| 作者姓名： | 方晓明 沈学础 侯宏启 冯巍 周均铭 |
| 作者单位： | (1)中国科学院上海技术物理研究所红外物理开放研究实验室,上海,200083; (2)中国科学院物理研究所,北京,100080 |
| 摘 要： | 在10—300K温度范围,研究了稳态发光二极管(LED)辐照对15周期的In0.15Ga0.85As(8nm)-CaAs(15nm)应力层多量子阱的光电流谱的影响。各跃迁过程对应的光电流峰的强度随LED光强的增大而减弱,并且具有不同的变化规律。据此可区分出束缚子带和连续带间的跃迁及其亚结构,并由跃迁的能量位置,直接确定导带和价带的不连续量,得出重空穴价带的能带台阶Qv=0.38±0.01。关键词： |
| 关 键 词： | GaAs 应力层 量子阱 跃迁 |
| 收稿时间： | 1989-06-15 |
CONFINED SUBBAND—CONTINUUM TRANSITIONS IN STRAINED LAYER In0.15Ga0.85As-GaAs MULTIPLE QUANTUM WELLS |
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| FANG XIAO-MING,SHEN XIE-CHU,HOU HONG-QI,FENG WEI and ZHOU JUN-MIN. CONFINED SUBBAND—CONTINUUM TRANSITIONS IN STRAINED LAYER In0.15Ga0.85As-GaAs MULTIPLE QUANTUM WELLS[J]. Acta Physica Sinica, 1990, 39(4): 627-631 | |
| Authors: | FANG XIAO-MING SHEN XIE-CHU HOU HONG-QI FENG WEI ZHOU JUN-MIN |
| Abstract: | The influence of steady LED irradiation on the photocurrent spectra of the strained layer multiple quantum wells In0.15Ga0.85 As (8nm)-GaAs (15nm) with 15 periods have been studied from 10 K to 300 K. The photocurrent peaks corresponding to various transitions decrease in different ways with the increase of LED irradiation intensity. By this means, the transitions from confined subband to continuum can be identified easily, and the conduction- and valence-band edge discontinuity has been determined directly from the experimental energy values of various transitions. Consequently, the band offset of heavyhole valence band is obtained as Qv = 0.38±0.01. |
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