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Unidirectional hexagonal rare-earth disilicide nanowires on vicinal Si(100)-2×1 |
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| Authors: | D Lee DK Lim SS Bae S Kim R Ragan DAA Ohlberg Y Chen R Stanley Williams |
| Institution: | 1. Department of Chemistry and School of Molecular Science (BK 21), Korea Advanced Institute of Science and Technology, Daejeon, 305-701, ?? 2. Quantum Science Research, Hewlett-Packard Laboratories, 1501 Page Mill Road, MS1123, Palo Alto, CA, 94304, USA 3. Department of Mechanical and Aerospace Engineering, University of California, Los Angeles, CA, 90095, USA |
| Abstract: | Rare-earth disilicide nanowires grown on vicinal Si(100) with a miscut of 2–2.5° toward the 110] azimuth at 600 °C were studied by scanning tunneling microscopy and compared with those grown on flat Si(001). In contrast to rare-earth disilicide nanowires grown on flat Si(100) surfaces, the nanowires grow unidirectionally along the 01̄1] direction of the vicinal Si(100) surface. Rare-earth disilicide nanowires form bundles composed of single nanowire units on both flat and vicinal surfaces. Yet, on the vicinal surface, the bundle width is comparable to the width of the terrace. The average nanowire length on the vicinal substrate is longer than that on the flat substrate. Scanning tunneling spectroscopy shows that the rare-earth disilicide nanowires have metallic properties. PACS 81.07.Vb; 81.16.Dn; 68.65.La; 68.37.Ef |
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