| Effect of In_x Ga_(1-x )N “continuously graded” buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition |
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| 引用本文： | 钱卫宁,宿世臣,陈弘,马紫光,朱克宝,何苗,卢平元,王耿,卢太平,杜春花,王巧,吴汶波,张伟伟.Effect of In_x Ga_(1-x )N “continuously graded” buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition[J].中国物理 B,2013,22(10):106106-106106. |
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| 作者姓名： | 钱卫宁 宿世臣 陈弘 马紫光 朱克宝 何苗 卢平元 王耿 卢太平 杜春花 王巧 吴汶波 张伟伟 |
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| 作者单位： | a Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-electronic Materials & Technology, South China Normal University, Guangzhou 510631, China;b Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China |
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| 收稿时间： | 2013-01-04 |
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