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Evidence of carbon-carbon bond formation on GaAs(100) via Fischer-Tropsch methylene insertion reaction mechanism
Authors:Kemp Neil T  Singh Nagindar K
Affiliation:School of Chemistry, University of New South Wales, Sydney NSW 2052, Australia. nkemp@phys.unsw.edu.au
Abstract:Sequential multiple methylene (CH2) insertions into adsorbed methyl species on clean gallium-rich GaAs(100)-(4 x 1) occurs to form higher alkenes (ethene, propene, butene) and two higher alkyl iodides (iodoethane, iodopropane), not reported for a semiconductor surface previously.
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