溶胶-凝胶方法制备ZnO:Al薄膜及其制备工艺条件研究

采用Sol-Gel工艺在玻璃基片上制备出C轴择优取向性、高可见光透过率以及高电导率的Al³⁺离子掺杂的ZnO透明导电薄膜ZnO:Al(ZAO薄膜).并研究了退火温度、Al掺杂量等对其光电性能的影响.结果表明,溶胶-凝胶法制备ZAO薄膜的最佳工艺条件为:溶胶浓度0.75 mol/L、掺杂量1.5 atm%,镀膜层数10层(厚度约为136 nm)、退火温度600℃.

Preparation of the ZnO:Al Thin Films by Sol-Gel and Study on Their Preparation Technics Conditions

The Al~(3+)-doped ZnO transparent conducting films ZnO∶Al(ZAO thin films) which have potential value with strongly preferred orientation of C-axis perpendicular to the substrate surface,high visible transmittance from 400—800 nm and high conductivity were prepared on glass substrates by Sol-Gel method.The influences that affected the films' optical and electrical properties,such as the annealing temperature,the Al~(3+)-doped quantity etc.were studied.The results proved that the best craft conditions to prepare ZAO thin films by Sol-Gel method were as follows: sol concentration 0.75 mol/L,doped quantity 1.5 atm%,coating layer 10 layers(thickness about 136 nm),annealing temperature 600 ℃.