Ag作催化剂制备的GaN的形貌及其性能

用化学气相沉积法(CVD)在Si(100)衬底上以Ag纳米颗粒为催化剂制备了微纳米结构的GaN,原料是熔融态的金属Ga和气态的NH3。采用X射线衍射仪(XRD)、透射电镜(TEM)、X-ray能谱仪(EDS)、场发射扫描电子显微镜(SEM)、光致发光能谱(PL)和霍尔效应测试对样品进行了结构、成分、形貌和发光、电学性能分析。结果表明:生成的自组装GaN为六方纤锌矿的类似小梯子的微纳米单晶结构,且在不同的温度下,GaN的发光性能和电学性能也有所不同,相对于强的紫外发光峰,其它杂质发光峰很微弱,且均呈p型导电。对本实验所得到的GaN微纳米结构的可能形成机理进行了探讨。

Morphology and Performance of GaN with Catalyst Ag

GaN micro/nanostructures were synthesized on Si(100) substrate with Ag nanoparticles as catalyst via chemical vapor deposition (CVD). The raw materials are melting metal Ga and NH₃ gas. The structure, composition, morphology and luminous property of GaN were analyzed by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), field emission scanning electron microscopy (SEM), Photoluminescence (PL) and Hall effect measurement respectively. The results show that the grown self-assemble hexagonal Wurtzite GaN nanostructures are single crystal nanoscale and micron grade small ladders. The optical and electrical properties of the grown GaN nanostructures are different. Relative to the strong ultraviolet light peak, other impurities photoluminescence peaks are weak, They are p-type conductive. Furthermore, the possible formation mechanism of those GaN micro/nanostructures is discussed.