| Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide |
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| 作者姓名： | 王超 张义门 张玉明 马格林 郭辉 徐大庆 |
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| 作者单位： | Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China;Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China |
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| 基金项目： | Project supported by the
National Natural Science Foundation of China (Grant No~60376001), the
National Basic Research Program of China (Grant No~2002CB311904) and the
National Defense Basic Research Program of China (Grant No~51327020202). |
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| 摘 要： | The diffusion behaviours of vanadium implanted p- and n-type 4H-SiC are investigated by using the secondary ion mass spectrometry （SIMS）. Significant redistribution, especially out-diffusion of vanadium towards the sample surface is not observed after 1650 ℃annealing for both p- and n-type samples. Atomic force microscopy （AFM） is applied to the characterization of surface morphology, indicating the formation of continuous long furrows running in one direction across the wafer surface after 1650 ℃ annealing. The surface roughness results from the evaporation and re-deposition of Si species on the surface during annealing. The chemical compositions of sample surface axe investigated using x-ray photoelectron spectroscopy （XPS）. The results of C ls and Si 2p core-level spectra axe presented in detail to demonstrate the evaporation of Si from the wafer and the deposition of SiO2 on the sample surface during annealing.
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| 关 键 词： | 碳化硅 掺杂物 扩散 退火 表面生态学 |
| 收稿时间： | 2006-12-20 |
| 修稿时间： | 2006-12-20 |
Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide |
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| Wang Chao,Zhang Yi-Men,Zhang Yu-Ming,Ma Ge-Lin,Guo Hui and Xu Da-Qing.Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide[J].Chinese Physics B,2007,16(8):2455-2461. |
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| Authors: | Wang Chao Zhang Yi-Men Zhang Yu-Ming Ma Ge-Lin Guo Hui and Xu Da-Qing |
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| Institution: | Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China |
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| Abstract: | The diffusion behaviours of vanadium implanted p- and
n-type 4H-SiC are investigated by using the secondary
ion mass spectrometry (SIMS).
Significant redistribution, especially out-diffusion of vanadium towards the
sample surface is not observed after 1650℃ annealing for both p-
and n-type samples. Atomic force microscopy (AFM) is applied to the
characterization of
surface morphology, indicating the formation of continuous long furrows
running in one direction across the wafer surface after 1650℃
annealing. The surface roughness results from the
evaporation and re-deposition of
Si species on the surface during annealing. The chemical compositions of
sample surface are investigated using x-ray photoelectron spectroscopy (XPS).
The results of C 1s and Si 2p core-level spectra are presented in detail to
demonstrate the evaporation of Si from the wafer and the deposition of SiO2
on the sample surface during annealing. |
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| Keywords: | vanadium implanted SiC annealing diffusion surface
morphology |
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